The observation of an anomalous Hall effect in altermagnetic ruthenium dioxide

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November 30, 2022 feature

Ingrid Fadelli is a writer for the website Phys.org.

The Hall effect is a phenomenon that describes the development of an electric field in a material with a magnetic field. Martin Karplus and Joaqun Mazdak Luttinger showed in the 1950s that ferromagnetic metals with broken time-reversal symmetry can have an anaphylactic Hall Conductivity.

Antiferromagnetic materials have magnetic moments that are parallel to applied magnetic fields. Studies have shown that antiferromagnets do not have the same properties as ferromagnetics. Most studies have been done on ferromagnets.

Researchers at Beihang University, Johannes Gutenberg Universität Mainz and Huazhong University of Science and Technology have recently observed an anomalous Hall effect in

ruthenium dioxide has been found to have an antiparallel magnetic order. Their findings, published in a paper in Nature Electronics, could lead to more research on materials with compensated antiparallel magnetic orders.

The Hall effect of comparable strength to ferromagnets has been predicted by the authors of the paper. There is an altermagnetic phase of RuO 2 with a characteristic alternating spin polarization in both real-space crystal structure and momentum-space band structure.

Measurement techniques were used in the experiments. Researchers are able to measure the strength, direction, and other properties of a magnetic field with the help of avector magnetometers The electrical transport properties of materials under a magnetic field can be examined with the help of a magneto-transport measurement system.

Two methods were applied to the films. The Hall effect was highlighted by the measurement they collected.

In their paper, Feng and his colleagues said that they had reported an "anomaly Hall effect in RuO 2." We combine the two methods to get a better picture of the crystallographic orientations of the films. The Hall effect dominates over an ordinary Hall contribution because of a weak field.

Some materials with an antiparallel magnetic order can also have T symmetry-breaking magneto- electronic effects, as shown by the findings gathered by this team of researchers. Their work could pave the way for other studies probing these effects in other materials with similar properties.

The results could lead to the exploration of Berry phases and quantum transport in abundant elements and with a compensated antiparallel magnetic order.

The Hall effect in altermagnetic ruthenium dioxide has more information.

Journal information: Nature Electronics

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