There is a new device that can demonstrate the Hall effect, in which small steps are generated by a magnetic field. Future quantum computers could be enabled by this work.
An external magnetic field can be applied to an ordinary wire to create a new electrical voltage. A simple magnetic sensor can use the Hall effect, but the sensitivity can be low.
The quantum Hall effect comes in quanta and is similar to the quantum version. The possibility of using the quantum Hall effect for the purpose of constructing new highly-conducting wires or quantum computers has been raised. The physics behind this phenomenon is not fully understood.
A group of researchers led by the Institute of Materials Science at the University of Tsukuba have used a topological material in which current flows at the interface but not through the bulk to induce a Hall effect.
By using a ferromagnetic material, iron, as the top layer of the device, the magnetic proximity effect can produce magnetic ordering without introducing disorder that would be caused by an alternative method of doing things. Professor Kuroda says that the current produced by the Hall effect can travel along the interface of a layer without being dissipated.
A thin film of a single-crystal Heterostructure consisting of an iron layer on top of tin telluride was grown on a template. The researchers used neutrons, which have a magnetic moment but no electrical charge, to measure the surface's magnetism.
The ferromagnetic order can penetrate into the tin telluride layer even at room temperature. Professor Kuroda says that their research points the way towards next- generation spintronics and quantum computation devices.
The research has shown that it is possible to produce layers that exhibit the Hall effect.
The paper was published in the journal.
More information: Ryota Akiyama et al, Direct Probe of the Ferromagnetic Proximity Effect at the Interface of SnTe/Fe Heterostructure by Polarized Neutron Reflectometry, The Journal of Physical Chemistry Letters (2022). DOI: 10.1021/acs.jpclett.2c01478 Journal information: Journal of Physical Chemistry Letters