Antiferromagnetic hybrids achieve important functionality for spintronic applications
(a) Cross-sectional transmission electron micrograph of the m-plane Al2O3/Cr2O3 interface with the c-axis [0001]-oriented out of the page and (b,c) the corresponding diffractograms of Cr2O3 and Al2O3 indicating epitaxial order. (d) Sample geometry. The magnetic field is applied parallel to the c-axis. (e) Spin Seebeck (SSE) voltage of the Cr2O3/Pt sample shows a sign change across the SF transition. (f) SSE signals dominated by left-hand (LH) and quasiferromagnetic (QFM) magnons fall rapidly with increasing temperature. Credit: Rodolfo Rodriguez et al, Physical Review Research (2022). DOI: 10.1103/PhysRevResearch.4.033139

Antiferromagnets do not have net magnetization. Future ultra-fast and energy efficient information storage, processing, and transmission platforms could be created by antiferromagnetic spintronic devices.

The devices need to be able to operate at room temperature in order to be useful. There is an injection of spin current at the antiferromagnetic interface. In the past, spin injection at these interface was done at a certain temperature.

In collaboration with researchers at the University of California, Irvine and the University of Utah, a team led by Barsukov has demonstrated efficient spin transport in an antiferromagnet. Spin transport is a key process in the operation of spin-based devices and the researchers observed that it is important in the antiferromagnet and ferromagnet.

The study appeared in the journal.

Barsukov is an assistant professor of physics and astronomy.

Barsukov was joined in the research by many other people.

More information: Rodolfo Rodriguez et al, Robust spin injection via thermal magnon pumping in antiferromagnet/ferromagnet hybrid systems, Physical Review Research (2022). DOI: 10.1103/PhysRevResearch.4.033139